Electron holographic tomography for mapping the three-dimensional distribution of electrostatic potential in III-V semiconductor nanowires

被引:34
作者
Wolf, D. [1 ]
Lichte, H. [1 ]
Pozzi, G. [2 ]
Prete, P. [3 ]
Lovergine, N. [4 ]
机构
[1] Tech Univ Dresden, Inst Struct Phys, Triebenberg Lab, D-01062 Dresden, Germany
[2] Univ Bologna, Dept Phys, I-40127 Bologna, Italy
[3] IMM CNR, Lecce Res Unit, I-73100 Lecce, Italy
[4] Univ Salento, Dipartimento Ingn Innovaz, I-73100 Lecce, Italy
关键词
CORE-SHELL NANOWIRES; MICROSCOPY; GROWTH;
D O I
10.1063/1.3604793
中图分类号
O59 [应用物理学];
学科分类号
摘要
Electron holographic tomography (EHT), the combination of off-axis electron holography with electron tomography, is a technique, which can be applied to the quantitative 3-dimensional (3D) mapping of electrostatic potential at the nanoscale. Here, we show the results obtained in the EHT investigation of GaAs and GaAs-AlGaAs core-shell nanowires grown by Au-catalysed metalorganic vapor phase epitaxy. The unique ability of EHT of disentangling the materials mean inner potential (MIP) from the specimen projected thickness allows reconstruction of the nanowire 3D morphology and inner compositional structure as well as the measurement of the MIP. (C) 2011 American Institute of Physics. [doi:10.1063/1.3604793]
引用
收藏
页数:3
相关论文
共 22 条
[1]   Nanowire resonant tunneling diodes [J].
Björk, MT ;
Ohlsson, BJ ;
Thelander, C ;
Persson, AI ;
Deppert, K ;
Wallenberg, LR ;
Samuelson, L .
APPLIED PHYSICS LETTERS, 2002, 81 (23) :4458-4460
[2]  
Borgström MT, 2005, NANO LETT, V5, P1439, DOI 10.1021/nl050802y
[3]   On direct-writing methods for electrically contacting GaAs and Ge nanowire devices [J].
Chen, Guannan ;
Gallo, Eric M. ;
Burger, Joan ;
Nabet, Bahram ;
Cola, Adriano ;
Prete, Paola ;
Lovergine, Nico ;
Spanier, Jonathan E. .
APPLIED PHYSICS LETTERS, 2010, 96 (22)
[4]   Mapping of electrostatic potentials within core-shell nanowires by electron holography [J].
Chung, JH ;
Rabenberg, L .
APPLIED PHYSICS LETTERS, 2006, 88 (01)
[5]   Determination of the inelastic mean-free-path and mean inner potential for AlAs and GaAs using off-axis electron holography and convergent beam electron diffraction [J].
Chung, Suk ;
Smith, David J. ;
McCartney, Martha R. .
MICROSCOPY AND MICROANALYSIS, 2007, 13 (05) :329-335
[6]   Mapping Active Dopants in Single Silicon Nanowires Using Off-Axis Electron Holography [J].
den Hertog, Martien I. ;
Schmid, Heinz ;
Cooper, David ;
Rouviere, Jean-Luc ;
Bjoerk, Mikael T. ;
Riel, Heike ;
Rivallin, Pierrette ;
Karg, Siegfried ;
Riess, Walter .
NANO LETTERS, 2009, 9 (11) :3837-3843
[7]  
Hawkes P. W., 2006, ELECT TOMOGRAPHY MET
[8]   Structural properties of (111)B-oriented III-V nanowires [J].
Johansson, J ;
Karlsson, LS ;
Svensson, CPT ;
Martensson, T ;
Wacaser, BA ;
Deppert, K ;
Samuelson, L ;
Seifert, W .
NATURE MATERIALS, 2006, 5 (07) :574-580
[9]   Determination of the mean inner potential in III-V semiconductors, Si and Ge by density functional theory and electron holography [J].
Kruse, P ;
Schowalter, M ;
Lamoen, D ;
Rosenauer, A ;
Gerthsen, D .
ULTRAMICROSCOPY, 2006, 106 (02) :105-113
[10]   Determination of the mean inner potential in III-V semiconductors by electron holography [J].
Kruse, P ;
Rosenauer, A ;
Gerthsen, D .
ULTRAMICROSCOPY, 2003, 96 (01) :11-16