Strain balanced quantum posts

被引：7

作者：

Alonso-Alvarez, D. ^{[1
]}

Alen, B. ^{[1
]}

Ripalda, J. M. ^{[1
]}

Llorens, J. M. ^{[1
]}

Taboada, A. G. ^{[1
]}

Briones, F. ^{[1
]}

Roldan, M. A. ^{[2
]}

Hernandez-Saz, J. ^{[2
]}

Hernandez-Maldonado, D. ^{[2
]}

Herrera, M. ^{[2
]}

Molina, S. I. ^{[2
]}

机构：

[1] CSIC, IMM, CNM, Tres Cantos 28760, Spain

[2] Univ Cadiz, Dept Ciencia Mat & Ing Met & QI, Cadiz 11510, Spain

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 17期

关键词：

LATERAL COMPOSITION MODULATION; DOTS; GROWTH;

D O I：

10.1063/1.3583455

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Quantum posts are assembled by epitaxial growth of closely spaced quantum dot layers, modulating the composition of a semiconductor alloy, typically InGaAs. In contrast with most self-assembled nanostructures, the height of quantum posts can be controlled with nanometer precision, up to a maximum value limited by the accumulated stress due to the lattice mismatch. Here, we present a strain compensation technique based on the controlled incorporation of phosphorous, which substantially increases the maximum attainable quantum post height. The luminescence from the resulting nanostructures presents giant linear polarization anisotropy. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3583455]

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页数：3

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