EFFECT OF CYCLE COUNT IN SILAR DEPOSITION OF COUNTER ELECTRODE ON THE PERFORMANCE OF QUATERNARY QUANTUM DOT SENSITIZED SOLAR CELL

Cu-Ni-S alloyed films of different thicknesses were prepared by varying the number of cycles in SILAR deposition and were used for the application as Counter Electrode in QDSSCs. For device fabrication, titanium dioxide films were used as a photo-anode layer, Cu2ZnSnS4 quaternary quantum dots as a sensitizer, and polysulfide electrolyte was used as Redox mediator. The effect of number of SILAR cycles on the electrical and electrochemical parameters was studied with V-I characteristic curve and electrochemical impedance spectroscopy. The device incorporating counter electrode deposited by 10 SILAR cycles performed best among other devices because of its lowest impedance parameters.