Robust helical edge transport in quantum spin Hall quantum wells

被引：31

作者：

Skolasinski, Rafal ^{[1
,2
]}

Pikulin, Dmitry, I ^{[3
]}

Alicea, Jason ^{[4
,5
,6
]}

Wimmer, Michael ^{[1
,2
]}

机构：

[1] Delft Univ Technol, QuTech, NL-2600 GA Delft, Netherlands

[2] Delft Univ Technol, Kavli Inst Nanosci, NL-2600 GA Delft, Netherlands

[3] Microsoft Res, Stn Q, Santa Barbara, CA 93106 USA

[4] CALTECH, Dept Phys, Pasadena, CA 91125 USA

[5] CALTECH, Inst Quantum Informat & Matter, Pasadena, CA 91125 USA

[6] CALTECH, Walter Burke Inst Theoret Phys, Pasadena, CA 91125 USA

来源：

PHYSICAL REVIEW B | 2018年 / 98卷 / 20期

基金：

美国国家科学基金会;

关键词：

TOPOLOGICAL INSULATORS; STATE; BAND; SUPERCONDUCTIVITY; TRANSITION; SURFACE; GAP;

D O I：

10.1103/PhysRevB.98.201404

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We show that edge-state transport in semiconductor-based quantum spin Hall systems is unexpectedly robust to magnetic fields. The origin for this robustness lies in an intrinsic suppression of the edge-state g-factor and the fact that the edge-state Dirac point is typically hidden in the valence band. A detailed k.p band-structure analysis reveals that both InAs/GaSb and HgTe/CdTe quantum wells exhibit such buried Dirac points for a wide range of well thicknesses. By simulating transport in a disordered system described within an effective model, we demonstrate that edge-state transport remains nearly quantized up to large magnetic fields, consistent with recent experiments.

引用

页数：5

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