Investigation of structure and magnetoresistance in Co/ZnO films

被引：22

作者：

Quan, Zhi-Yong ^{[1
]}

Xu, Xiao-Hong ^{[1
]}

Li, Xiao-Li ^{[1
]}

Feng, Q. ^{[2
]}

Gehring, G. A. ^{[2
]}

机构：

[1] Shanxi Normal Univ, Sch Chem & Mat Sci, Linfen 041004, Peoples R China

[2] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 108卷 / 10期

基金：

中国国家自然科学基金; 美国国家科学基金会; 国家高技术研究发展计划(863计划);

关键词：

GIANT MAGNETORESISTANCE; TUNNELING MAGNETORESISTANCE; GRANULAR FILMS; FERROMAGNETISM; MULTILAYERS; SYSTEMS;

D O I：

10.1063/1.3511752

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Co/ZnO films were deposited on glass substrates by magnetron sputtering at room temperature. The structure of the as-deposited films is studied by means of x-ray diffraction, x-ray photoelectron spectroscopy, and the zero-field-cooled and field-cooled magnetization curves. It is shown that the as-deposited samples consist of a mixture of regions of metallic Co and semiconducting ZnO. Large negative magnetoresistance of 26% and 11.9% are observed in the as-deposited Co/ZnO film with Co concentration of 50.7 at. % at 10 K and room temperature, respectively. Structural analysis, the temperature dependence of the conductivity and magnetoresistance reveal that the magnetoresistance is induced by spin-dependent tunneling between regions of conducting magnetic Co through the ZnO semiconducting barriers. The enhanced magnetoresistance in the low temperature regime may be related to the existence of higher-order tunneling processes between large Co regions mediated by small Co particles. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3511752]

引用

页数：5

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