Effect of residual impurities on polarization switching kinetics in atomic-layer-deposited ferroelectric Hf0.5Zr0.5O2 thin films

被引：34

作者：

Lee, Dong Hyun ^{[1
]}

Yu, Geun Taek ^{[1
]}

Park, Ju Yong ^{[1
]}

Kim, Se Hyun ^{[1
]}

Yang, Kun ^{[1
]}

Park, Geun Hyeong ^{[1
]}

Ryu, Jin Ju ^{[2
,3
]}

Lee, Je In ^{[1
]}

Kim, Gun Hwan ^{[2
]}

Park, Min Hyuk ^{[1
,4
]}

机构：

[1] Pusan Natl Univ, Sch Mat Sci & Engn, 2,Busandaehak Ro 63 Beon Gil, Busan 46241, South Korea

[2] Korea Res Inst Chem Technol KRICT, Div Adv Mat, 141 Gajeong Ro, Daejeon 34114, South Korea

[3] Yonsei Univ, Dept Mat Sci & Engn, 50 Yonsei Ro, Seoul 03722, South Korea

[4] Seoul Natl Univ, Coll Engn, Dept Mat Sci & Engn, 1 Gwanak Ro, Seoul 08826, South Korea

来源：

ACTA MATERIALIA | 2022年 / 222卷

基金：

新加坡国家研究基金会;

关键词：

Ferroelectric; Hafnia; Impurity; Atomic layer deposition; Switching kinetics; HAFNIUM OXIDE; PHASE; FIELD; HFO2; MECHANISMS;

D O I：

10.1016/j.actamat.2021.117405

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The ferroelectricity in fluorite-structured ferroelectrics such as HfO2 and ZrO2 has attracted increasing interest in both academia and industry. Although the polarization switching kinetics is one of the research topics which critically requires further study for the novel ferroelectric material, various factors affecting the polarization switching kinetics have not been rarely examined to date. Especially in atomic-layer deposited films, the defects including residual impurities are expected to strongly influence the polarization switching kinetics. In this study, therefore, the effect of deposition temperature (T-dep) and impurity concentration on the physical/electrical properties and polarization switching kinetics of atomic-layer deposited Hf0.5Zr0.5O2 thin films is reported based on physical/chemical/electrical analyses. With decreasing Tdep, the concentration of residual impurities, including carbon increased, resulting in decreased grain size. The increased defect concentration decreased the median switching time and increased the deviation of the switching time distribution. This can be attributed to the lowered energy barrier for the nucleation of oppositely polarized domains and increased spatial inhomogeneities, respectively. This result suggests that Tdep is a key process parameter for optimizing the polarization reversal behavior of fluorite structured ferroelectrics as it has a considerable influence on the ferroelectric properties and polarization switching kinetics, which are strongly correlated to the defect concentrations and microstructure. (C) 2021 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页数：12

共 72 条

[61] Kinetics of phase transformations in real finite systems: Application to switching in ferroelectrics [J].