Self-Assembled InGaAs/GaAs Quantum Dot Microtube Coherent Light Sources on GaAs and Silicon

被引：3

作者：

Mi, Z. ^{[1
]}

Vicknesh, S. ^{[1
]}

Li, F. ^{[1
]}

Bhattacharya, P. ^{[2
]}

机构：

[1] McGill Univ, Dept Elect & Comp Engn, 3480 Univ St, Montreal, PQ H3A 2A7, Canada

[2] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

来源：

SILICON PHOTONICS IV | 2009年 / 7220卷

基金：

加拿大自然科学与工程研究理事会; 加拿大创新基金会;

关键词：

Quantum dot; semiconductor tube; monolithic integration; silicon photonics; optical interconnect; TRANSISTORS; ELECTROLUMINESCENCE; NANOTUBES; EMISSION; LASERS; WIRES;

D O I：

10.1117/12.810117

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the fabrication and emission characteristics of InGaAs/GaAs quantum dot microtube-based coherent light sources on GaAs and Si, which are formed by self-rolling of pseudomorphically strained semiconductor bilayers through controlled release from the substrate. Tailoring of the optical modes is achieved by engineering the shape of the microtube ring resonators. Using substrate-to-substrate transfer method, we have also achieved, for the first time, three-dimensionally confined quantum dot microtube optical ring resonators on Si, that are relatively free of dislocations. Sharp polarized and regularly spaced optical modes, with an intrinsic Q-factor of similar to 3,000, were measured at 77 K.

引用

页数：9

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