Effect of process variations and ambient temperature on electron mobility at the SiO2/4H-SiC interface

被引：134

作者：

Lu, CY ^{[1
]}

Cooper, JA

Tsuji, T

Chung, G

Williams, JR

McDonald, K

Feldman, LC

机构：

[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

[2] Fuji Elect Co, Tokyo, Japan

[3] Dow Corning Corp, Tampa, FL 33601 USA

[4] Auburn Univ, Auburn, AL 36849 USA

[5] Sandia Natl Labs, Albuquerque, NM 87185 USA

[6] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2003年 / 50卷 / 07期

关键词：

mobility; MOSFET; silicon carbide;

D O I：

10.1109/TED.2003.814974

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the effect of processing variables on the inversion layer electron mobility of (0001)-oriented 4H-SiC n-channel MOSFETs. The process variables investigated include i) implant anneal temperature and ambient ii) oxidation procedure iii) postoxidation annealing in nitric oxide (NO) iv) type of gate material and v) high-temperature ohmic contact anneal. Electron mobility is significantly increased by a postoxidation anneal in NO, but other process variations investigated have only minor effects on the channel mobility. We also report the temperature dependence of electron mobility for NO and non-NO annealed n-channel MOSFETs.

引用

页码：1582 / 1588

页数：7

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