Symmetry and Spin of the Decavacancy in Crystalline Si

被引:6
作者
Uchida, Kazuyuki [1 ]
Oshiyama, Atsushi
机构
[1] Univ Tokyo, Dept Appl Phys, Bunkyo Ku, Tokyo 1138656, Japan
关键词
vacancy; multivacancy; decavacancy; silicon; symmetry; high-spin state; SILICON; VACANCY; PSEUDOPOTENTIALS; APPROXIMATION; DEFECTS;
D O I
10.1143/JPSJ.79.093711
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We report total-energy electronic-structure calculations based on the density-functional theory which clarify atomic structure, spin configuration and charge of the decavacancy V-10 in crystalline Si. We have found that V10 is a negative-U system due to substantial breathing relaxation of the surrounding atoms, which makes charge states ranging from +4 to -4 possible. We have also found that V10 exhibits various types of Jahn-Teller symmetry lowering in the atomic structure depending on the charge. Highly spin-polarized states are obtained in several charge states.
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页数:4
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