Simulation of boron diffusion in strained Si1-xGex epitaxial layers

This paper describes a simple and accurate model for boron diffusion in SiGe that was successfully implemented in TAURUS (PMEI). The comparison of the Si1-xGex samples to the Si samples after rapid thermal and furnace annealing revealed a retarded B diffusion inside the strained Si1-xGex layers. The influence of the Ge content on the dopant diffusion was also measured and simulated, demonstrating that the diffusion of B was found to decrease with the Ge alloy content. The model fits for various Ge %(both box and graded profiles) and thermal budgets. The simulation results of various Ge % and thermal budgets show good agreement with measurement data and the predicted B diffusivity show a reasonably low value.