Combined effects of semiconductor gain dynamics, spin dynamics and thermal shift in polarization selection in VCSELs

mr, discuss mechanisms of polarization switching (PS) in Vertical Cavity Surface Emitting Lasers (VCSELs) within a mesoscopic approach based on an explicit form of a frequency-dependent complex susceptibility of the QW semiconductor material. Cavity anisotropies, spin carrier dynamics and thermal shift of the gain curve are also taken into account in this framework. For large birefringence we find a PS due to thermal shift. For small birefringence we find a different PS, from the high-gain to the low-gain polarization state, that occurs at constant temperature. We characterize polarization partition noise in terms of power spectra. Transverse effects for PS in gain guided VCSELs are also considered.