Study process of silicon carbide as high temperature microwave absorber

被引：0

作者：

Li Zhimin ^{[1
,2
]}

Du Hongliang ^{[1
]}

Luo Fa ^{[1
]}

Su Xiaolei ^{[1
]}

Zhou Wancheng ^{[1
]}

机构：

[1] Northwestern Polytech Univ, State Key Lab Solidificat Proc, Xian 710072, Peoples R China

[2] Xidian Univ, Sch Tech Phys, Xian 710071, Peoples R China

来源：

RARE METAL MATERIALS AND ENGINEERING | 2007年 / 36卷

关键词：

silicon carbide; doping; high temperature absorber; radar absorbing materials;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The properties and microwave absorbing performance for high temperature of silicon carbide are reviewed, and the improvements on its electrical properties by doping are discussed. The synthesis methods of nano-SiC absorber are showed in detail, which have chemical vapor deposition method, laser method and sol-gel and carbothermal reduction method. The mechanisms of microwave loss are analyzed.

引用

页码：94 / 99

页数：6

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