Optimization of physical properties of transparent conductive F and Ga co-doped ZnO films for optoelectronic applications

被引：12

作者：

Wang, Yanfeng ^{[1
]}

Song, Jianmin ^{[2
]}

Guo, Yajuan ^{[1
]}

Duan, Xiaochen ^{[1
]}

Li, Zelong ^{[1
]}

Wang, Dongqing ^{[1
]}

Xue, Junming ^{[3
]}

Yang, Fu ^{[1
]}

Li, Junjie ^{[1
]}

机构：

[1] Hebei North Univ, Coll Sci, Photovolta Conduct Film Engn Res Ctr Hebei Prov, Zhangjiakou 075000, Peoples R China

[2] Agr Univ Hebei, Coll Sci, Baoding 071001, Peoples R China

[3] China HiSun PV Technol Co Ltd, Hengshui 053000, Peoples R China

来源：

MATERIALS LETTERS | 2020年 / 269卷 / 269期

关键词：

F and Ga co-doped ZnO films; Sputtering; High mobility; Wide spectral transmittance; Solar energy material; TEMPERATURE; XPS; AL;

D O I：

10.1016/j.matlet.2020.127591

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Highly transparent conductive F and Ga co-doped ZnO films were deposited on a glass substrate with radio frequency magnetron sputtering at various growth temperatures. Growing the films at a substrate temperature of 480 degrees C produced the lowest resistivity of 6.84 x 10(-4) Omega cm, a carrier concentration of 2.3 x 10(20) cm(-3), and a mobility of 39.7 cm(2)/Vs. These parameters were significantly improved to 3.53 x 10(-4) Omega cm, 3.08 x 10(20) cm(-3), and 57.5 cm(2)/Vs, respectively, after a rapid thermal annealing treatment. All the films showed a high average transmittance of 90% in the optical range 380-1400 nm. (C) 2020 Elsevier B.V. All rights reserved.

引用

页数：4

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