Optimization of physical properties of transparent conductive F and Ga co-doped ZnO films for optoelectronic applications

被引：12
|
作者：
Wang, Yanfeng [1 ]
Song, Jianmin [2 ]
Guo, Yajuan [1 ]
Duan, Xiaochen [1 ]
Li, Zelong [1 ]
Wang, Dongqing [1 ]
Xue, Junming [3 ]
Yang, Fu [1 ]
Li, Junjie [1 ]
机构：
[1] Hebei North Univ, Coll Sci, Photovolta Conduct Film Engn Res Ctr Hebei Prov, Zhangjiakou 075000, Peoples R China
[2] Agr Univ Hebei, Coll Sci, Baoding 071001, Peoples R China
[3] China HiSun PV Technol Co Ltd, Hengshui 053000, Peoples R China
来源：
MATERIALS LETTERS | 2020年 / 269卷 / 269期
关键词：
F and Ga co-doped ZnO films; Sputtering; High mobility; Wide spectral transmittance; Solar energy material; TEMPERATURE; XPS; AL;
D O I：
10.1016/j.matlet.2020.127591
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Highly transparent conductive F and Ga co-doped ZnO films were deposited on a glass substrate with radio frequency magnetron sputtering at various growth temperatures. Growing the films at a substrate temperature of 480 degrees C produced the lowest resistivity of 6.84 x 10(-4) Omega cm, a carrier concentration of 2.3 x 10(20) cm(-3), and a mobility of 39.7 cm(2)/Vs. These parameters were significantly improved to 3.53 x 10(-4) Omega cm, 3.08 x 10(20) cm(-3), and 57.5 cm(2)/Vs, respectively, after a rapid thermal annealing treatment. All the films showed a high average transmittance of 90% in the optical range 380-1400 nm. (C) 2020 Elsevier B.V. All rights reserved.
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页数：4
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