An advanced III-V-on-silicon photonic integration platform

被引：31
作者：
Hu, Yingtao [1 ]
Liang, Di [1 ]
Beausoleil, Raymond G. [1 ]
机构：
[1] Hewlett Packard Enterprise, Hewlett Packard Labs, 820 N McCarthy Blvd, Milpitas, CA 95035 USA
来源：
OPTO-ELECTRONIC ADVANCES | 2021年 / 4卷 / 09期
关键词：
Si photonics; III-V-on-Si laser; photonic integration; epitaxy regrowth; SIO2/SI SUBSTRATE; LASER; INP; NETWORK; CHIP;
D O I：
10.29026/oea.2021.200094
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
In many application scenarios, silicon (Si) photonics favors the integration of III-V gain material onto Si substrate to realize the on-chip light source. In addition to the current popular integration approaches of III-V-on-Si wafer bonding or direct heteroepitaxial growth, a newly emerged promising solution of epitaxial regrowth on bonded substrate has attracted a lot of interests. High-quality III-V material realization and successful laser demonstrations show its great potential to be a promising integration platform for low-cost, high-integration density and highly scalable active-passive photonic integration on Si. This paper reviews recent research work on this regrowth on bonded template platform including template developments, regrown material characterizations and laser demonstrations. The potential advantages, opportunities and challenges of this approach are discussed.
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页数：14
相关论文
共 41 条
[1]  
AIHARA T, 2018, 2018 OPT FIB COMM C, pN2130
[2]  
Aihara T, 2019, 2019 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC)
[3]   Laser Array Covering 155 nm Wide Spectral Band Achieved by Selective Area Growth on Silicon Wafer [J].
Besancon, C. ;
Fanneau, P. ;
Neel, D. ;
Cerulo, G. ;
Vaissiere, N. ;
Make, D. ;
Pommereau, F. ;
Fournel, F. ;
Dupre, C. ;
Baron, T. ;
Decobert, J. .
2020 EUROPEAN CONFERENCE ON OPTICAL COMMUNICATIONS (ECOC), 2020,
[4]   Comparison of AlGaInAs-Based Laser Behavior Grown on Hybrid InP-SiO2/Si and InP Substrates [J].
Besancon, Claire ;
Cerulo, Giancarlo ;
Neel, Delphine ;
Vaissiere, Nicolas ;
Make, Dalila ;
Fournel, Frank ;
Dupre, Cecilia ;
Jany, Christophe ;
Bassani, Franck ;
David, Sylvain ;
Baron, Thierry ;
Decobert, Jean .
IEEE PHOTONICS TECHNOLOGY LETTERS, 2020, 32 (08) :469-472
[5]   Epitaxial Growth of High-Quality AlGaInAs-Based Active Structures on a Directly Bonded InP-SiO2/Si Substrate [J].
Besancon, Claire ;
Vaissiere, Nicolas ;
Dupre, Cecilia ;
Fournel, Frank ;
Sanchez, Loic ;
Jany, Christophe ;
David, Sylvain ;
Bassani, Franck ;
Baron, Thierry ;
Decobert, Jean .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2020, 217 (03)
[6]  
Chen SM, 2016, NAT PHOTONICS, V10, P307, DOI [10.1038/nphoton.2016.21, 10.1038/NPHOTON.2016.21]
[7]   Epitaxial growth of InP to bury directly bonded thin active layer on SiO2/Si substrate for fabricating distributed feedback lasers on silicon [J].
Fujii, Takuro ;
Sato, Tomonari ;
Takeda, Koji ;
Hasebe, Koichi ;
Kakitsuka, Takaaki ;
Matsuo, Shinji .
IET OPTOELECTRONICS, 2015, 9 (04) :151-157
[8]   A Bonded Template-Assisted Monolithic Iintegration Platform [J].
Hu, Yingtao ;
Liang, Di ;
Kurczveil, Geza ;
Beausoleil, Raymond G. .
OPTOELECTRONIC DEVICES AND INTEGRATION VIII, 2019, 11184
[9]   III/V-on-Si MQW lasers by using a novel photonic integration method of regrowth on a bonding template [J].
Hu, Yingtao ;
Liang, Di ;
Mukherjee, Kunal ;
Li, Youli ;
Zhang, Chong ;
Kurczveil, Geza ;
Huang, Xue ;
Beausoleil, Raymond G. .
LIGHT-SCIENCE & APPLICATIONS, 2019, 8 (1)
[10]  
Hu YT, 2018, IEEE PHOTON CONF
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