Effective drive current in steep slope FinFET (vs. conventional FinFET)

With the negative capacitance (NC) effect of ferroelectric materials, a sub-60-mV/decade subthreshold slope in a conventional field-effect transistor has been theoretically and experimentally demonstrated. In order to utilize the NC for complementary metal-oxide-semiconductor logic device applications, it is necessary to closely examine various parameters for the device performance. Specifically, the analysis of effective drive current (i.e., I-eff = {I-DS@[V-DS = 0.5V(DD), V-G = V-DD] + I-DS@[V-DS = V-DD, V-G = 0.5V(DD)]}/2) of the NC device is vital. In this work, I-eff of a NC fin field-effect transistor (FinFET), in which a baseline 70 nm FinFET is electrically integrated with a ferroelectric capacitor, is experimentally measured to explore the correlation between hysteresis and I-eff. Published by AIP Publishing.