Hydrogen-Induced Conversion of SnS2 into SnS or Sn: A Route to Create SnS2/SnS Heterostructures

被引:14
|
作者
Felton, James [1 ]
Blundo, Elena [2 ]
Kudrynskyi, Zakhar [1 ]
Ling, Sanliang [3 ]
Bradford, Jonathan [1 ]
Pettinari, Giorgio [4 ]
Cooper, Timothy [3 ]
Wadge, Matthew [3 ]
Kovalyuk, Zakhar [5 ]
Polimeni, Antonio [2 ]
Beton, Peter [1 ]
Grant, David [3 ]
Walker, Gavin [3 ]
Patane, Amalia [1 ]
机构
[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England
[2] Sapienza Univ Roma, Dipartimento Fis, I-00185 Rome, Italy
[3] Univ Nottingham, Fac Engn, Adv Mat Res Grp, Nottingham NG7 2RD, England
[4] CNR, Inst Photon & Nanotechnol CNR IFN, I-00156 Rome, Italy
[5] Natl Acad Sci Ukraine, Chernivtsi Branch, Inst Problems Mat Sci, UA-58001 Chernovtsy, Ukraine
基金
英国工程与自然科学研究理事会; 欧盟地平线“2020”;
关键词
heterostructures; hydrogen-induced conversion; tin disulfide; tin sulfide; van der Waals; RAMAN-SPECTRA; INTERCALATION; GRAPHENE;
D O I
10.1002/smll.202202661
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The family of van der Waals (vdW) materials is large and diverse with applications ranging from electronics and optoelectronics to catalysis and chemical storage. However, despite intensive research, there remains significant knowledge-gaps pertaining to their properties and interactions. One such gap is the interaction between these materials and hydrogen, a potentially vital future energy vector and ubiquitous processing gas in the semiconductor industry. This work reports on the interaction of hydrogen with the vdW semiconductor SnS2, where molecular hydrogen (H-2) and H-ions induce a controlled chemical conversion into semiconducting-SnS or to beta-Sn. This hydrogen-driven reaction is facilitated by the different oxidation states of Sn and is successfully applied to form SnS2/SnS heterostructures with uniform layers, atomically flat interfaces and well-aligned crystallographic axes. This approach is scalable and offers a route for engineering materials at the nanoscale for semiconductor technologies based on the earth-abundant elements Sn and S, a promising result for a wide range of potential applications.
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页数:9
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