Density of States of a Nanoscale Semiconductor Interface as a Transduction Signal for Sensing Molecules

被引：8

作者：

Pinzon, Edgar F. ^{[1
]}

dos Santos, Adriano ^{[1
]}

Bueno, Paulo R. ^{[1
]}

机构：

[1] Sao Paulo State Univ UNESP, Inst Chem, BR-14800900 Araraquara, SP, Brazil

来源：

ACS APPLIED ELECTRONIC MATERIALS | 2021年 / 3卷 / 08期

基金：

巴西圣保罗研究基金会;

关键词：

density of states; semiconductor interface; electrochemical capacitance; Fermi level; phenol sensing; C-REACTIVE PROTEIN; CAPACITANCE SPECTROSCOPY; CATALYTIC-OXIDATION; BIOSENSOR; PHENOL; NANOSTRUCTURES; NANOCOMPOSITE; NANOPARTICLES; TIO2;

D O I：

10.1021/acsaelm.1c00387

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nanoscale inorganic semiconductors (with interfacial thickness <10 nm) have superior stability compared to soft organic compounds and are important for the development of enhanced reagentless sensing devices. As a proof of concept, this study demonstrated that the density of states of a copper oxide mixed valence semiconducting nanoscale film can be suitably designed as a transducer signal for reagentless sensing of phenol.

引用

页码：3411 / 3417

页数：7

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