Numerical simulation of the effecion of inlet velocity in GaN growth by MOCVD

被引：0
作者：
Peng, Dongsheng [1 ]
Chen, Zhigang [1 ]
Tan, Congcong [1 ]
机构：
[1] Shenzhen Univ, Minist Educ & Guangdong Prov, Key Lab Optoelect Devices & Syst, Shenzhen 518060, Peoples R China
来源：
MECHATRONICS ENGINEERING, COMPUTING AND INFORMATION TECHNOLOGY | 2014年 / 556-562卷
关键词：
Numerical simulation; Inlet velocity; GaN; MOCVD; VAPOR-PHASE EPITAXY; GALLIUM NITRIDE; HEAT-TRANSFER; REACTORS;
D O I：
10.4028/www.scientific.net/AMM.556-562.4155
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A mathematical model for the growth of gallium nitride in a vertical impinging metalorganic chemical vapor deposition (MOCVD) reactor is developed. The dependence of the GaN film and the uniformity of the deposited layers on the inlet velocity is investigated to gain greater insight into the reactor performance and characteristics. Based on the simulation results, discussion is presented in this paper to offer the possibility of better control of the GaN film growth process and to ultimately lead to an optimization of the process.
引用
收藏
页码：4155 / 4158
页数：4
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