Quantum behaviors in low-dimensional semiconductor nanostructures

被引：0

作者：

Park, KW ^{[1
]}

Lee, EH ^{[1
]}

机构：

[1] ETRI, Basic Res Labs, Taejon 305600, South Korea

来源：

PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2 | 1998年 / 3316卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present an overview on the quantum behaviors of confined electrons in low-dimensional semiconductor structures. Some of the new nanostructures include an uneven gate conducting wire, a corrugated quantum wire, an electron grating structure, a metal-insulator-metal-semiconductor junction structure, and self-assembled quantum dot. We found that the quantum mechanical behaviors appeared in the electrical properties of the devices, which are quantum interferences and single electron tunneling, respectively. We discuss the results of the quantum behaviors from the viewpoint of attaining high density integration and multi-functionality.

引用

页码：47 / 54

页数：8