Defect centers of rare-earth metals in a-Si(H)

被引：0

作者：

Bordovskii, V. A. ^{[1
]}

Marchenko, A. V. ^{[1
]}

Mezdrogina, M. M. ^{[2
]}

Naletko, A. S. ^{[1
]}

Seregin, P. P. ^{[1
]}

Dashina, A. D.

机构：

[1] Herzen State Pedag Univ Russia, St Petersburg 191186, Russia

[2] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

GLASS PHYSICS AND CHEMISTRY | 2012年 / 38卷 / 02期

关键词：

hydrogenated amorphous silicon; rare-earth metals; photoconduction;

D O I：

10.1134/S1087659612020034

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Electrical and photoelectric properties of a-Si(H) films doped by rare-earth metals were investigated. Nd, Sm, Gd, Tb, Dy, Ho, and Yb dopant atoms were shown to generate an acceptor type band near to the middle of the mobility gap of a-Si(H). Eu dopant atoms generate a donor-type band in the mobility gap of a-Si(H). Eu, Dy and Yb dopant atoms intensify photoconduction of a-Si(H) whereas Nd, Sm, Gd, Tb, and Ho dopes inhibit the photoconduction.

引用

页码：228 / 233

页数：6