WTe2 thin films grown by beam-interrupted molecular beam epitaxy

被引：46

作者：

Walsh, Lee A. ^{[1
]}

Yue, Ruoyu ^{[1
]}

Wang, Qingxiao ^{[1
]}

Barton, Adam T. ^{[1
]}

Addoua, Rafik ^{[1
]}

Smyth, Christopher M. ^{[1
]}

Zhu, Hui ^{[1
]}

Kim, Jiyoung ^{[1
]}

Colombo, Luigi ^{[2
]}

Kim, Moon J. ^{[1
]}

Wallace, Robert M. ^{[1
]}

Hinkle, Christopher L. ^{[1
]}

机构：

[1] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA

[2] Texas Instruments Inc, Dallas, TX 75243 USA

来源：

2D MATERIALS | 2017年 / 4卷 / 02期

基金：

美国国家科学基金会;

关键词：

tungsten ditelluride; WTe2; transition metal dichalcogenide; van der Waals epitaxy; molecular beam epitaxy; TRANSITION-METAL DICHALCOGENIDES; SCANNING-TUNNELING-MICROSCOPY; DER-WAALS EPITAXY; LAYERED SEMICONDUCTORS; IN-SITU; TEMPERATURE; SNS2; MOS2; SPECTROSCOPY; RESISTANCE;

D O I：

10.1088/2053-1583/aa61e1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The growth of WTe2 thin films by molecular beam epitaxy is demonstrated for the first time on a variety of 2D substrates including MoS2, Bi2Te3, and graphite. We demonstrate that beam interruption of the metal source enables the growth of crystalline WTe2 films in the distorted octahedral (1T') phase. As a result of the van der Waals nature of this material, a sharp interface between the WTe2 thin film and the substrate is shown with no evidence of misfit dislocations. In addition, the buckled structure expected for the semi-metallic 1T' phase is observed with transmission electron microscopy. Raman spectroscopy further confirms the growth of the 1T' phase and x-ray photoelectron spectroscopy shows the films to be stoichiometric and semi-metallic as expected.

引用

页数：6

共 38 条

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