A 650V rated RESURF-type LDMOS employing an internal clamping diode for induced bulk breakdown without EPI layer.

被引：6

作者：

Kim, MH ^{[1
]}

Kim, JJ ^{[1
]}

Choi, YS ^{[1
]}

Jeon, CK ^{[1
]}

Kim, SL ^{[1
]}

Kang, HS ^{[1
]}

Song, CS ^{[1
]}

机构：

[1] Fairchild Korea Semicond Co, New Technol Dev Team, Wonmi Ku, Puchon 420711, Kyonggi Do, South Korea

来源：

ISPSD'01: PROCEEDINGS OF THE 13TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 2001年

关键词：

D O I：

10.1109/ISPSD.2001.934626

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new LDMOS employing an internal clamping diode is proposed in order to prevent surface breakdown which is a weak point of RESURF Type LDMOS. The claming diode of N+/ N-/P-well/P-sub was fabricated by cutting n-well located below drain contact and inserting p-well. Breakdown stabilization was realized by Inducing bulk breakdown at the clamping diode without the increase of Ron,sp (specific on resistance) when width of p-well was designed to 12um.

引用

页码：347 / 350

页数：4