Influence of the Design Features of a Magnetron Sputtering Deposition System on the Electrical and Optical Properties of Indium-Tin Oxide Films

被引：0

作者：

Kudriashov, D. A. ^{[1
]}

Maksimova, A. A. ^{[1
,2
]}

Vyacheslavova, E. A. ^{[1
]}

Uvarov, A., V ^{[1
]}

Morozov, I. A. ^{[1
]}

Baranov, A., I ^{[1
]}

Monastyrenko, A. O. ^{[1
]}

Gudovskikh, A. S. ^{[1
,2
]}

机构：

[1] Alferov St Petersburg Natl Res Acad Univ, Russian Acad Sci, St Petersburg 194021, Russia

[2] St Petersburg State Electrotech Univ LETI, St Petersburg 197022, Russia

来源：

SEMICONDUCTORS | 2021年 / 55卷 / 04期

关键词：

magnetron sputtering; indium-tin oxide; thin films; THIN-FILMS; DC; LAYERS;

D O I：

10.1134/S1063782621040072

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The influence of the relative position of a magnetron and substrate on the electrical and optical properties of a forming indium-tin oxide (ITO) layer is shown. The reasons for this behavior are considered and the role of oxygen in the occurrence of inhomogeneities in the properties of ITO films is shown. It is shown that in the growth mode without the supplementary addition of oxygen, the resistivity of ITO films differs by an order of magnitude ((2-14) x 10(-2) omega cm) for different positions of the substrate on the substrate holder along the radius in the range of 0-14 cm. In this case, differences in the shape of the short-wavelength spectral region are observed in the absorption spectra. The addition of a small (0.1 sccm) amount of oxygen to the working chamber during oxide growth leads to a significant increase in the uniformity of the electrical and optical properties of ITO films.

引用

页码：410 / 414

页数：5

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