Single supply, high linearity, high efficient PHEMT power devices and amplifier for 2 GHz & 5 GHz WLAN applications

被引：2

作者：

Park, M ^{[1
]}

Ahn, H ^{[1
]}

Kang, DM ^{[1
]}

Ji, H ^{[1
]}

Mun, J ^{[1
]}

Kim, H ^{[1
]}

Cho, KI ^{[1
]}

机构：

[1] Elect & Telecommun Res Inst, Taejon 305350, South Korea

来源：

33RD EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3, CONFERENCE PROCEEDINGS | 2003年

关键词：

D O I：

10.1109/EUMA.2003.340967

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A single supply, high linearity, high efficient power devices and amplifier MMIC is implemented utilizing high performance of quasi-enhanced power PHEMT technology. The PHEMT power device features Vth= -0.65 V, Vbdg=26 V, Imax=144 mA/mm at Vgs=0.2 V, Gm=340 mS/mm. When matched on-wafer compromise between power and efficiency, the OIP3 at peak IP3 is 40.5 dBm for 2 GHz and 37.0 dBm for 5.8 GHz, respectively. The power amplifier achieves at 5.8 GHz Pout=27 dBm with associated PAE=45 % at 5 V under Vgs=0 V, G(L)=14.5 dB, OIP3=37.5 dBm.

引用

页码：371 / 374

页数：4

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