Auger-free Si-SiGe quantum well structures for infra-red detection at 10 mu m

被引：3
作者：
Corbin, E
Wong, KB
Jaros, M
机构：
[1] Department of Physics, University of Newcastle Upon Tyne, Newcastle upon Tyne
来源：
SOLID-STATE ELECTRONICS | 1996年 / 39卷 / 02期
关键词：
D O I：
10.1016/0038-1101(95)00129-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have identified Si-SiGe quantum well structures which strongly absorb light in the 10-15 mu m range and whose band structure is engineered so that the Auger recombination processes are inhibited, thus enhancing the efficiency of such a device. We also present a comparison of our calculated line-shapes with recent experimental results.
引用
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页码：237 / 241
页数：5
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