Lumped DC-50GHz amplifier using InP/InGaAs HBTs

被引：9

作者：

Huber, A

Huber, D

Bergamaschi, C

Morf, T

Jäckel, H

机构：

[1] Swiss Fed Inst Technol, Elect Lab, Swiss Fed Inst Technol Zurich, CH-8092 Zurich, Switzerland

[2] FH Aargau, Fachgrp Angew Schaltungstech, CH-5210 Windisch, Switzerland

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 01期

关键词：

D O I：

10.1049/el:19990003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A direct-coupled. lumped broadband amplifier utilising InP/InGaAs single heterojunction bipolar transistors (SHBTs) is presented. The achieved -3dB bandwidth is 50GHz with a DC gain of 9.8dB and a gain peak of only 1.2dB. This is thr largest bandwidth repot-ted For InP/InGaAs HBT amplifiers with such a flat gain curve.

引用

页码：53 / 55

页数：3

共 5 条

[1] Broadband feedback amplifiers with AlInAs/GaInAs transferred-substrate HBT [J].

Agarwal, B ;

Lee, Q ;

Mensa, D ;

Pullela, R ;

Guthrie, J ;

Rodwell, MJW .

ELECTRONICS LETTERS, 1998, 34 (13) :1357-1358

[2] 23 GHz monolithically integrated InP/InGaAs PIN/HBT-receiver with 12 THzΩ gain-bandwidth product [J].

Huber, D ;

Bitter, M ;

Romier, S ;

Schnyder, I ;

Bauknecht, R ;

Morf, T ;

Bergamaschi, C ;

Jackel, H .

1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1998, :447-450

[3]

Kipnis I., 1989, IEEE 1989 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers (Cat. No.89CH2761-5), P101, DOI 10.1109/MCS.1989.37273

[4] A 50-MHz-55-GHz multidecade InP-based HBT distributed amplifier [J].

Kobayashi, KW ;

Cowles, J ;

Tran, LT ;

GutierrezAitken, A ;

Block, TR ;

Oki, AK ;

Streit, DC .

IEEE MICROWAVE AND GUIDED WAVE LETTERS, 1997, 7 (10) :353-355

[5]

SUZUKI Y, 1997, IEEE GAAS IC S

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