Lumped DC-50GHz amplifier using InP/InGaAs HBTs

被引：9
作者：
Huber, A
Huber, D
Bergamaschi, C
Morf, T
Jäckel, H
机构：
[1] Swiss Fed Inst Technol, Elect Lab, Swiss Fed Inst Technol Zurich, CH-8092 Zurich, Switzerland
[2] FH Aargau, Fachgrp Angew Schaltungstech, CH-5210 Windisch, Switzerland
来源：
ELECTRONICS LETTERS | 1999年 / 35卷 / 01期
关键词：
D O I：
10.1049/el:19990003
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A direct-coupled. lumped broadband amplifier utilising InP/InGaAs single heterojunction bipolar transistors (SHBTs) is presented. The achieved -3dB bandwidth is 50GHz with a DC gain of 9.8dB and a gain peak of only 1.2dB. This is thr largest bandwidth repot-ted For InP/InGaAs HBT amplifiers with such a flat gain curve.
引用
收藏
页码：53 / 55
页数：3
相关论文
共 5 条
  • [1] Broadband feedback amplifiers with AlInAs/GaInAs transferred-substrate HBT
    Agarwal, B
    Lee, Q
    Mensa, D
    Pullela, R
    Guthrie, J
    Rodwell, MJW
    [J]. ELECTRONICS LETTERS, 1998, 34 (13) : 1357 - 1358
  • [2] 23 GHz monolithically integrated InP/InGaAs PIN/HBT-receiver with 12 THzΩ gain-bandwidth product
    Huber, D
    Bitter, M
    Romier, S
    Schnyder, I
    Bauknecht, R
    Morf, T
    Bergamaschi, C
    Jackel, H
    [J]. 1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1998, : 447 - 450
  • [3] Kipnis I., 1989, IEEE 1989 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers (Cat. No.89CH2761-5), P101, DOI 10.1109/MCS.1989.37273
  • [4] A 50-MHz-55-GHz multidecade InP-based HBT distributed amplifier
    Kobayashi, KW
    Cowles, J
    Tran, LT
    GutierrezAitken, A
    Block, TR
    Oki, AK
    Streit, DC
    [J]. IEEE MICROWAVE AND GUIDED WAVE LETTERS, 1997, 7 (10): : 353 - 355
  • [5] SUZUKI Y, 1997, IEEE GAAS IC S
1