p-Si/DNA photoconductive diode for optical sensor applications

被引：43

作者：

Gupta, R. K. ^{[2
]}

Yakuphanoglu, F. ^{[1
]}

Hasar, H. ^{[3
,4
]}

Al-Khedhairy, Abdulaziz A. ^{[5
]}

机构：

[1] Firat Univ, Dept Phys, Fac Sci, TR-23169 Elazig, Turkey

[2] Missouri State Univ, Dept Phys Astron & Mat Sci, Springfield, MO 65897 USA

[3] Firat Univ, Dept Environm Engn, TR-23169 Elazig, Turkey

[4] Firat Univ, Biotechnol Res Ctr, TR-23169 Elazig, Turkey

[5] King Saud Univ, Coll Sci, Dept Zool, Riyadh 11451, Saudi Arabia

来源：

SYNTHETIC METALS | 2011年 / 161卷 / 17-18期

关键词：

DNA; Organic material; Photoresponse; Schottky diode; Ideality factor; HIGH SERIES RESISTANCE; ELECTRICAL-TRANSPORT; SCHOTTKY DIODES; ELECTRONIC-PROPERTIES; DNA-MOLECULES; THIN-FILMS;

D O I：

10.1016/j.synthmet.2011.07.016

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The junction parameters of Al/p-Si/Ag and Al/p-Si/DNA/Ag diodes were studied using current-voltage (I-V), capacitance-voltage (C-V), and capacitance-frequency (C-f) measurements. The photoresponse properties of the diodes were analyzed using transient photocurrent measurements. The photoresponse of the Al/p-Si/DNA/Ag diode is better than that of Al/p-Si/Ag diode. The ideality factor and barrier height values of the Al/p-Si/DNA/Ag diode were obtained to be 1.2 +/- 0.1 and 0.56 +/- 0.02 eV, respectively. The capacitance of the diodes increases with decreasing frequency which is explained by the change in the interface states. These results indicate that the p-Si/DNA junction could be used as an optical sensor. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：2011 / 2016

页数：6

共 29 条

[1]

[Anonymous], 1979, PHYS SEMICONDUCTOR D

[2] DNA-templated assembly and electrode attachment of a conducting silver wire [J].

Braun, E ;

Eichen, Y ;

Sivan, U ;

Ben-Yoseph, G .

NATURE, 1998, 391 (6669) :775-778

[3] Temperature dependent electrical and dielectric properties of Au/polyvinyl alcohol (Ni, Zn-doped)/n-Si Schottky diodes [J].

Dokme, I. ;

Altindal, S. ;

Tunc, T. ;

Uslu, I. .

MICROELECTRONICS RELIABILITY, 2010, 50 (01) :39-44

[4] Colloquium:: The quest for high-conductance DNA [J].

Endres, RG ;

Cox, DL ;

Singh, RRP .

REVIEWS OF MODERN PHYSICS, 2004, 76 (01) :195-214

[5] Direct observation of hole transfer through DNA by hopping between adenine bases and by tunnelling [J].

Giese, B ;

Amaudrut, J ;

Köhler, AK ;

Spormann, M ;

Wessely, S .

NATURE, 2001, 412 (6844) :318-320

[6] Photovoltaic and electronic properties of quercetin/p-InP solar cells [J].

Guellue, Oe. ;

Tueruet, A. .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2008, 92 (10) :1205-1210

[7] DNA-based organic-on-inorganic semiconductor Schottky structures [J].

Gullu, O. ;

Cankaya, M. ;

Baris, O. ;

Biber, M. ;

Ozdemir, H. ;

Gulluce, M. ;

Turut, A. .

APPLIED SURFACE SCIENCE, 2008, 254 (16) :5175-5180

[8] Electronic properties of Al/DNA/p-Si MIS diode: Application as temperature sensor [J].

Gullu, O. ;

Turut, A. .

JOURNAL OF ALLOYS AND COMPOUNDS, 2011, 509 (03) :571-577

[9] DNA-based organic-on-inorganic devices: Barrier enhancement and temperature issues [J].

Gullu, O. ;

Cankaya, M. ;

Baris, O. ;

Turut, A. .

MICROELECTRONIC ENGINEERING, 2008, 85 (11) :2250-2255

[10] Ultrahigh (100%) barrier modification of n-InP Schottky diode by DNA biopolymer nanofilms [J].

Gullu, Omer .

MICROELECTRONIC ENGINEERING, 2010, 87 (04) :648-651

← 1 2 3 →