Influence of nanosized inclusions on the room temperature thermoelectrical properties of a p-type bismuth-tellurium-antimony alloy

被引：3

作者：

Bernard-Granger, Guillaume ^{[1
]}

Addad, Ahmed ^{[2
]}

Navone, Christelle ^{[1
]}

Soulier, Mathieu ^{[1
]}

Simon, Julia ^{[1
]}

Szkutnik, Pierre-David ^{[1
]}

机构：

[1] Commissariat Energie Atom & Energies Alternat, DRT LITEN DTNM LCRE, F-38054 Grenoble 9, France

[2] Univ Sci & Technol Lille, UMR CNRS 8207, Unite Mat & Transformat, F-59655 Villeneuve Dascq, France

来源：

ACTA MATERIALIA | 2012年 / 60卷 / 11期

关键词：

Polycrystals; Microstructure; Transmission electron microscopy; Thermoelectric materials; QUANTUM-WELL STRUCTURES; FIGURE-OF-MERIT; PERFORMANCE;

D O I：

10.1016/j.actamat.2012.05.007

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Transmission electron microscopy observations and thermoelectrical property measurements (electrical conductivity, Seebeck coefficient and thermal conductivity) at room temperature have been completed on two fully dense polycrystalline p-type bismuth-tellurium-antimony alloy samples. It is shown that the presence of antimony oxide-based nanosized inclusions (controlled as to volume fraction and size distribution), homogeneously dispersed in the surrounding matrix leads to a dimensionless figure of merit (ZT) of similar to 1.3 at room temperature. For comparison, when such inclusions are missing the ZT value is only 0.6. (C) 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：4523 / 4530

页数：8

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