Graphene on Silicon Modulators

被引:30
作者
Sorianello, Vito [1 ]
Contestabile, Giampiero [2 ]
Romagnoli, Marco [1 ]
机构
[1] CNIT, Photon Networks & Technol Lab PNTLab, I-56124 Pisa, Italy
[2] Scuola Super Sant Anna, TECIP Inst, I-56124 Pisa, Italy
基金
欧盟地平线“2020”;
关键词
Optical waveguides; Graphene; Modulation; Silicon; Scattering; Photonics; Graphene photonics; integrated optics; modulators; silicon photonics; ELECTROABSORPTION MODULATOR; PHASE MODULATORS; PHOTONICS; CONTACT; DESIGN;
D O I
10.1109/JLT.2020.2974189
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Graphene is a 2D material with appealing electronic and optoelectronic properties. It is a zero-bandgap material with valence and conduction bands meeting in a single point (Dirac point) in the momentum space. Its conductivity can be changed by shifting the Fermi level energy via an external electric field. This important property determines broadband and tunable absorption at optical frequencies. Moreover, its conductivity is a complex quantity, i.e., Graphene exhibits both electro-absorption and electro-refraction tunability, and this is an intriguing property for photonic applications. For example, it can be combined as an active material for silicon waveguides to realize efficient detectors, switches, and modulators. In this article, we review our results in the field, focusing on graphene- based optical modulators integrated on Silicon photonic platforms. Results obtained in the fabrication of single and double-layer capacitive modulators are reported showing intensity and phase modulation, resilience of the generated signals to chromatic dispersion because of proper signal chirp and operation up to 50 Gb/s.
引用
收藏
页码:2781 / 2788
页数:8
相关论文
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