Application of Raman spectroscopy to probe fundamental properties of two-dimensional materials

被引:150
作者
Cong, Xin [1 ,2 ,3 ]
Liu, Xue-Lu [1 ]
Lin, Miao-Ling [1 ]
Tan, Ping-Heng [1 ,2 ,3 ,4 ]
机构
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
[3] Univ Chinese Acad Sci, CAS Ctr Excellence Topol Quantum Computat, Beijing 100049, Peoples R China
[4] Beijing Acad Quantum Informat Sci, Beijing 100193, Peoples R China
基金
中国国家自然科学基金;
关键词
CHARGE-DENSITY WAVES; PHASE-TRANSITION; BREATHING MODES; GRAPHENE; MONOLAYER; SCATTERING; PHONON; MULTILAYER; SUPERLATTICES; FINGERPRINT;
D O I
10.1038/s41699-020-0140-4
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Two-dimensional materials (2DMs), with remarkably electronic, optical, and mechanical properties, exhibit both high scientific interest and huge application potential. Raman spectroscopy has been proven to be a fast, convenient, and nondestructive technique to characterize the fundamental properties of 2DMs at both laboratory and mass-production scales. In this review, we discuss recent advances in application of Raman spectroscopy to 2DMs for probing their fundamental properties. First, we introduce Raman characterization on different types of 2DMs, phase transition triggered by defect, electrostatic doping and temperature, thickness-dependent intralayer and interlayer modes, and two-dimensional alloys with tunable compositions. The extensive capabilities of Raman spectroscopy in probing quantum phase transition are discussed, such as charge density wave and magnetic transition. Then, we discuss application of Raman spectroscopy to probe the moire phonons, interfacial coupling and cross-dimensional electron-phonon coupling in van der Waals heterostructures (vdWHs). We hope that this review will be helpful to study the basic properties of 2DMs and vdWHs themselves and those present in the related devices by Raman spectroscopy.
引用
收藏
页数:12
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