Black Phosphorus p-MOSFETs With 7-nm HfO2 Gate Dielectric and Low Contact Resistance

被引：75

作者：

Haratipour, Nazila ^{[1
]}

Robbins, Matthew C. ^{[1
]}

Koester, Steven J. ^{[1
]}

机构：

[1] Univ Minnesota, Dept Elect & Comp Engn, Minneapolis, MN 55455 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2015年 / 36卷 / 04期

基金：

美国国家科学基金会;

关键词：

Two-dimensional materials; black phosphorus; high-K gate dielectrics; contact resistance; MOSFET; SEMICONDUCTOR; MOBILITY;

D O I：

10.1109/LED.2015.2407195

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report record contact resistance and transconductance in locally back-gated black phosphorus p-MOSFETs with 7-nm thick HfO2 gate dielectrics. Devices with effective gate lengths, L-eff, from 0.55 to 0.17 mu m were characterized and shown to have contact resistance values as low as 1.14 +/- 0.05 Omega-mm. In addition, devices with L-eff = 0.17 mu m displayed extrinsic transconductance exceeding 250 mu S/mu m and ON-state current approaching 300 mu A/mu m.

引用

页码：411 / 413

页数：3

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