Al0.65Ga0.35N/Al0.4Ga0.6N Micro-Channel Heterojunction Field Effect Transistors With Current Density Over 900 mA/mm

被引：25

作者：

Xue, Hao ^{[1
]}

Hussain, Kamal ^{[2
]}

Razzak, Towhidur ^{[1
]}

Gaevski, Mikhail ^{[2
]}

Sohel, Shahadat Hasan ^{[1
]}

Mollah, Shahab ^{[2
]}

Talesara, Vishank ^{[1
]}

Khan, Asif ^{[2
]}

Rajan, Siddharth ^{[1
]}

Lu, Wu ^{[1
]}

机构：

[1] Ohio State Univ, Elect & Comp Engn Dept, Columbus, OH 43220 USA

[2] Univ South Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2020年 / 41卷 / 05期

关键词：

HEMTs; MODFETs; Current density; Radio frequency; Logic gates; Aluminum gallium nitride; ultra-wide band gap; RF transistor;

D O I：

10.1109/LED.2020.2977997

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the demonstration of high current density in Al0.65Ga0.35N/Al0.4Ga0.6N heterojunction field effect transistors with micro-channels enabled by enhanced contact injection. Devices with a gate length of 100 nm exhibited a maximum current density of 910 mA/mm and a maximum transconductance of 140 mS/mm. A current gain cut off frequency of 20 GHz and maximum oscillation frequency of 36 GHz were obtained. Large-signal load-pull characterization of the transistors showed output power density of 2.7 W/mm at 10 GHz. The current density and output power density represent the state-of-art performance for high Al-composition AlGaN channel transistors.

引用

页码：677 / 680

页数：4

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