Itinerant 5f electrons and the Fermi surface properties in an enhanced Pauli paramagnet NpGe3

被引：25

作者：

Aoki, D ^{[1
]}

Yamagami, H

Homma, Y

Shiokawa, Y

Yamamoto, E

Nakamura, A

Haga, Y

Settai, R

Onuki, Y

机构：

[1] Tohoku Univ, Mat Res Inst, Oarai, Ibaraki 3111313, Japan

[2] Kyoto Sangyo Univ, Fac Sci, Dept Phys, Kyoto 6038555, Japan

[3] Japan Atom Energy Res Inst, Adv Sci Res Ctr, Tokai, Ibaraki 3191195, Japan

[4] Osaka Univ, Grad Sch Sci, Toyonaka, Osaka 5600043, Japan

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 2005年 / 74卷 / 08期

关键词：

NPGe3; de Haas-van Alphen effect; Fermi surface; band calculation;

D O I：

10.1143/JPSJ.74.2149

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We succeeded in growing a high-quality single crystal of an enhanced Pauli paramagnet, NpGe3, by the Bi-flux method, and observed the de Haas-van Alphen (dHvA) effect. The topology of a Fermi surface is well explained by the relativistic linear augmented-plane-wave (LAPW) band calculations based on the 5f itinerant band model. The Fermi surface consists of a nearly spherical electron-Fermi surface with necks along the (100) direction, forming a hollow ball, centered at the R point, which is derived from the single band. The cyclotron effective mass is in the range from 2.6 to 16m(o), which is enhanced approximately 3.5 times from the corresponding band:mass.

引用

页码：2149 / 2152

页数：4

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