Structure Design and Analysis of 2 μm InGaAsSb/AlGaAsSb Muti-Quantum Well Laser Diode with Carrier Blocking Layer

被引：2

作者：

An, Ning ^{[1
]}

Ma, Lei ^{[1
]}

Wen, Guanyu ^{[1
]}

Liang, Zhipeng ^{[1
]}

Zhang, Haitao ^{[1
]}

Gao, Tianshu ^{[1
]}

Fan, Cunbo ^{[1
]}

机构：

[1] Chinese Acad Sci, Changchun Observ NAO, Changchun 130117, Jilin, Peoples R China

来源：

APPLIED SCIENCES-BASEL | 2019年 / 9卷 / 01期

基金：

中国国家自然科学基金;

关键词：

2 mu m laser diode; InGaAsSb/AlGaAsSb; quantum-well; carrier leakage;

D O I：

10.3390/app9010162

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A low threshold current density of 2 mu m InGaAsSb/AlGaAsSb muti-quantum well (MQW) laser diode with carrier blocking layer (CBL) is demonstrated by simulation and fabrication. The carrier leakage is found to be theoretically suppressed for the devices with CBL. All the laser wafers are grown with a solid source Molecular Beam Epitaxy(MBE) System. Experimental results reveal the samples with CBL exhibits ultra-low threshold current densities of 142 A/cm(2) and high slope efficiency of 0.158 W/A, which is better than 215 A/cm(2) and 0.122 W/A achieved in the conventional InGaAsSb/AlGaAsSb LDs at room temperature. This improvement in device performance comes from meticulously designing the carrier blocking layers to increase carrier confinement and injection efficiency.

引用

页数：7

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