Afterpulsing effects in free-running InGaAsP single-photon avalanche diodes

被引：45

作者：

Jiang, Xudong ^{[1
]}

Itzler, Mark A. ^{[1
]}

Ben-Michael, Rafael ^{[1
]}

Slomkowski, Krystyna ^{[1
]}

Krainak, Michael A. ^{[2
]}

Wu, Stewart ^{[2
]}

Sun, Xiaoli ^{[2
]}

机构：

[1] Princeton Lightwave Inc, Cranbury, NJ 08512 USA

[2] NASA, Goddard Space Flight Ctr, Laser & Electroopt Branch, Greenbelt, MD 20771 USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2008年 / 44卷 / 1-2期

基金：

美国国家航空航天局;

关键词：

avalanche photodiodes; photodiodes; single-photon; avalanche diodes; single photon detection;

D O I：

10.1109/JQE.2007.906996

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate large-area (80 mu m diameter) InP-based single-photon avalanche diodes for Geiger-mode operation at 1.06 mu m with dark count rates of similar to 1000 Hz at high detection efficiencies of 30% at 237 K, as well as simulations of dark count rate and detection efficiency that provide good agreement with measured data. Experimental results obtained using free-running operation illustrate the strong impact of afterpulsing effects for short (similar to 200 ns) hold-off times. We present an analysis of these free-running results that quantifies the contribution of afterpulsing to the total count rate.

引用

收藏

页码：3 / 11

页数：9

相关论文

共 25 条

[1] OPTICAL DISPERSION-RELATIONS FOR GAP, GAAS, GASB, INP, INAS, INSB, ALXGA1-XAS, AND IN1-XGAXASYP1-Y [J].

ADACHI, S .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (12) :6030-6040

[2]

Ben-Michael R., 2006, 2006 Digest of the LEOS Summer Topical Meetings (IEEE Cat. No. 06TH8863C), P15, DOI 10.1109/LEOSST.2006.1694045

[3]

BETHELL PE, 1959, T FARADAY SOC, V51, P9

[4] Scaling of dark count rate with active area in 1.06 μm photon-counting InGaAsP/InP avalanche photodiodes [J].

Dauler, E. A. ;

Hopman, P. I. ;

McIntosh, K. A. ;

Donnelly, J. P. ;

Duerr, E. K. ;

Magliocco, R. J. ;

Mahoney, L. J. ;

Molvar, K. M. ;

Napoleone, A. ;

Oakley, D. C. ;

O'Donnell, F. J. .

APPLIED PHYSICS LETTERS, 2006, 89 (11)

[5] Design considerations for 1.06-μm InGaAsP-InP Geiger-mode avalanche photodiodes [J].

Donnelly, Joseph P. ;

Duerr, Erik K. ;

McIntosh, K. Alex ;

Dauler, Eric A. ;

Oakley, Douglas C. ;

Groves, Steven H. ;

Vineis, Christopher J. ;

Mahoney, Leonard J. ;

Molvar, Karen M. ;

Hopman, Pablo I. ;

Jensen, Katharine Estelle ;

Smith, Gary M. ;

Verghese, Simon ;

Shaver, David C. .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2006, 42 (7-8) :797-809

[6] DEEP LEVELS IN IN0.53GA0.47AS/INP HETEROSTRUCTURES [J].

FORREST, SR ;

KIM, OK .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) :5738-5745

[7] Performance and design of InGaAs/InP photodiodes for single-photon counting at 1.55 μm [J].

Hiskett, PA ;

Buller, GS ;

Loudon, AY ;

Smith, JM ;

Gontijo, I ;

Walker, AC ;

Townsend, PD ;

Robertson, MJ .

APPLIED OPTICS, 2000, 39 (36) :6818-6829

[8] Single photon avalanche diodes (SPADs) for 1.5 μm photon counting applications [J].

Itzler, M. A. ;

Ben-Michael, R. ;

Hsu, C. -F. ;

Slomkowski, K. ;

Tosi, A. ;

Cova, S. ;

Zappa, F. ;

Ispasoiu, R. .

JOURNAL OF MODERN OPTICS, 2007, 54 (2-3) :283-304

[9]

ITZLER MA, 2007, P SOC PHOTO-OPT INS, V6572

[10] Afterpulsing in Geiger-mode avalanche photodiodes for 1.06 μm wavelength [J].

Jensen, KE ;

Hopman, PI ;

Duerr, EK ;

Dauler, EA ;

Donnelly, JP ;

Groves, SH ;

Mahoney, LJ ;

McIntosh, KA ;

Molvar, KM ;

Napoleone, A ;

Oakley, DC ;

Verghese, S ;

Vineis, CJ ;

Younger, RD .

APPLIED PHYSICS LETTERS, 2006, 88 (13)