Temperature-dependent ac conductivity and dielectric response of vanadium doped CaCu3Ti4O12 ceramic

Successful incorporation of vanadium dopant within the giant dielectric material CaCu Ti-3 O-4(12) (CCTO) through a conventional solid-state sintering process is achieved and its influence on the dielectric as well as electrical properties as a function of temperature and frequency is reported here. Proper crystalline phase formation together with dopant induced lattice constant shrinkage was confirmed through X-ray diffraction. The temperature dependence of the dielectric constant at different constant frequencies was investigated. We infer that the correlated barrier hopping (CBH) model is dominant in the conduction mechanism of the ceramic as per the temperature-dependent ac conductivity measurements. The electronic parameters such as density of the states at the Fermi level, N(E (f)) and hopping distance, R (omega) of the ceramic were also calculated using this model.