Minority Carrier Lifetimes and Surface Effects in VLS-Grown Axial p-n Junction Silicon Nanowires

被引：32

作者：

Jung, Yeonwoong ^{[1
]}

Vacic, Aleksandar ^{[1
]}

Perea, Daniel E. ^{[2
]}

Picraux, Samuel T. ^{[2
]}

Reed, Mark A. ^{[1
]}

机构：

[1] Yale Univ, Dept Elect Engn & Appl Phys, New Haven, CT 06511 USA

[2] Los Alamos Natl Lab, Ctr Integrated Nanotechnol, Los Alamos, NM 87545 USA

来源：

ADVANCED MATERIALS | 2011年 / 23卷 / 37期

关键词：

SOLAR-CELLS; DIODES; RECOMBINATION;

D O I：

10.1002/adma.201101429

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The minority carrier lifetimes of VLS-grown axial p-n junction silicon nanowires are characterized by the reverse recovery transients of electrically injected minority carriers. Nanowire-diameter-dependent lifetimes and various electrical properties indicate the enhanced surface recombination with decreasing diameters, suggesting the significance of surface passivations for effective carrier transport in photovoltaic applications. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：4306 / 4311

页数：6

共 8 条

[1] Highly Efficient Charge Separation and Collection across in Situ Doped Axial VLS-Grown Si Nanowire p-n Junctions
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[2] The effects of surface modification on the electrical properties of p-n+ junction silicon nanowires grown by an aqueous electroless etching method
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[8] Formation of a hybrid pn junction via p-type aluminium induced crystallized polycrystalline silicon on hydrothermally grown n-type zinc oxide nanowires
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