Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy

被引：60
|
作者：
Cho, Yong-Jin [1 ,4 ]
Summerfield, Alex [1 ]
Davies, Andrew [1 ,2 ]
Cheng, Tin S. [1 ]
Smith, Emily F. [2 ,3 ]
Mellor, Christopher J. [1 ]
Khlobystov, Andrei N. [2 ,3 ]
Foxon, C. Thomas [1 ]
Eaves, Laurence [1 ]
Beton, Peter H. [1 ]
Novikov, Sergei V. [1 ]
机构：
[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England
[2] Univ Nottingham, Sch Chem, Nottingham NG7 2RD, England
[3] Univ Nottingham, Nottingham Nanoscale & Microscale Res Ctr, Nottingham NG7 2RD, England
[4] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA
来源：
SCIENTIFIC REPORTS | 2016年 / 6卷
基金：
英国工程与自然科学研究理事会;
关键词：
H-BN; GRAPHENE; LAYER; HETEROSTRUCTURES; SPECTROSCOPY;
D O I：
10.1038/srep34474
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
We demonstrate direct epitaxial growth of high-quality hexagonal boron nitride (hBN) layers on graphite using high-temperature plasma-assisted molecular beam epitaxy. Atomic force microscopy reveals mono-and few-layer island growth, while conducting atomic force microscopy shows that the grown hBN has a resistance which increases exponentially with the number of layers, and has electrical properties comparable to exfoliated hBN. X-ray photoelectron spectroscopy, Raman microscopy and spectroscopic ellipsometry measurements on hBN confirm the formation of sp(2)-bonded hBN and a band gap of 5.9 +/- 0.1 eV with no chemical intermixing with graphite. We also observe hexagonal moire patterns with a period of 15 nm, consistent with the alignment of the hBN lattice and the graphite substrate.
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页数：6
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