Iodine-Optimized Interface for Inorganic CsPbI2Br Perovskite Solar Cell to Attain High Stabilized Efficiency Exceeding 14%

被引:139
作者
Zhang, Jingru [1 ]
Jin, Zhiwen [1 ,2 ,3 ]
Liang, Lei [1 ]
Wang, Haoran [1 ]
Bai, Dongliang [1 ]
Bian, Hui [1 ]
Wang, Kang [1 ]
Wang, Qian [1 ,2 ,3 ]
Yuan, Ningyi [4 ]
Ding, Jianning [4 ]
Liu, Shengzhong [1 ,5 ]
机构
[1] Shaanxi Normal Univ, Key Lab Appl Surface & Colloid Chem, Minist Educ,Shaanxi Key Lab Adv Energy Devices, Shaanxi Engn Lab Adv Energy Technol,Sch Mat Sci &, Xian 710119, Shaanxi, Peoples R China
[2] Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China
[3] Lanzhou Univ, Key Lab Magnetism & Magnet Mat, MoE, Lanzhou 730000, Peoples R China
[4] Changzhou Univ, Sch Mat Sci & Engn, Jiangsu Collaborat Innovat Ctr Photovolta Sci & E, Jiangsu Prov Cultivat Base State Key Lab Photovol, Changzhou 213164, Jiangsu, Peoples R China
[5] Chinese Acad Sci, Dalian Inst Chem Phys, Dalian Natl Lab Clean Energy iChEM, Dalian 116023, Peoples R China
基金
中国国家自然科学基金;
关键词
CsPbI2Br; efficiency; inorganic; iodine; perovskite; solar cells; LEAD HALIDE PEROVSKITES; ANION-EXCHANGE; THIN-FILMS; NANOCRYSTALS; PERFORMANCE; ENERGY; LAYER;
D O I
10.1002/advs.201801123
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Recently, inorganic CsPbI2Br perovskite is attracting ever-increasing attention for its outstanding optoelectronic properties and ambient phase stability. Here, an efficient CsPbI2Br perovskite solar cell (PSC) is developed by: 1) using a dimension-grading heterojunction based on a quantum dots (QDs)/bulk film structure, and 2) post-treatment of the CsPbI2Br QDs/film with organic iodine salt to form an ultrathin iodine-ion-enriched perovskite layer on the top of the perovskite film. It is found that the above procedures generate proper band edge bending for improved carrier collection, resulting in effectively decreased recombination loss and improved hole extraction efficiency. Meanwhile, the organic capping layer from the iodine salt also surrounds the QDs and tunes the surface chemistry for further improved charge transport at the interface. As a result, the champion device achieves long-term stabilized power conversion efficiency beyond 14%.
引用
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页数:8
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