Electromigration induced strain field simulations for nanoelectronics lead-free solder joints

被引：32

作者：

Basaran, Cemal ^{[1
]}

Lin, Minghui ^{[1
]}

机构：

[1] SUNY Buffalo, Dept Civil Struct & Environm Engn, Elect Packaging Lab, Buffalo, NY 14260 USA

来源：

INTERNATIONAL JOURNAL OF SOLIDS AND STRUCTURES | 2007年 / 44卷 / 14-15期

关键词：

electromigration; thermomigration; viscoplasticity; current crowding; finite element method; nanoelectronics packaging;

D O I：

10.1016/j.ijsolstr.2006.12.011

中图分类号：

O3 [力学];

学科分类号：

08 ; 0801 ;

摘要：

Electromigration is a major road block on the way to realization of nanoelectronics. Determination of plastic deformation under high current density is critical for prediction of electromigration failure. A new displacement-diffusion coupled model is proposed and implemented using finite element method. The model takes into account viscoplastic behavior of solder alloys, as a result, vacancy concentration evolution and electromigration process are accurately simulated. Finite element simulations were performed for lead-free solder joints under high current density and compared with experimental moire interferometry measurements. The comparison validates the model. (C) 2006 Elsevier Ltd. All rights reserved.

引用

页码：4909 / 4924

页数：16

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