Two FeH pairs in n-type Si and their implications:: A theoretical study

被引：8

作者：

Szwacki, N. Gonzalez ^{[1
]}

Sanati, M. ^{[1
]}

Estreicher, S. K. ^{[1
]}

机构：

[1] Texas Tech Univ, Dept Phys, Lubbock, TX 79409 USA

来源：

PHYSICAL REVIEW B | 2008年 / 78卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.78.113202

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Experimental evidence for interstitial {FeH} pairs in n-type Si stems from thermally stimulated capacitance (TSCAP). Electron- paramagnetic resonance (EPR) data have also been interpreted in terms of {FeH} pairs. We present theoretical studies of two {FeH} pairs. The properties of the first match those of the TSCAP center but are incompatible with the EPR center. The second is a possible candidate for the EPR center. If true, this suggests that high-temperature anneals can introduce substitutional Fe in concentrations higher than commonly believed.

引用

页数：4

共 58 条

[1]

Artacho E, 1999, PHYS STATUS SOLIDI B, V215, P809, DOI 10.1002/(SICI)1521-3951(199909)215:1<809::AID-PSSB809>3.0.CO

[2]

2-0

[3] PROJECTOR AUGMENTED-WAVE METHOD [J].

BLOCHL, PE .

PHYSICAL REVIEW B, 1994, 50 (24) :17953-17979

[4] ELECTRONIC-STRUCTURE APPROACH FOR COMPLEX SILICAS [J].

DEMKOV, AA ;

ORTEGA, J ;

SANKEY, OF ;

GRUMBACH, MP .

PHYSICAL REVIEW B, 1995, 52 (03) :1618-1630

[5] Iron in silicon: Interactions with radiation defects, carbon, and oxygen [J].

Estreicher, S. K. ;

Sanati, M. ;

Szwacki, N. Gonzalez .

PHYSICAL REVIEW B, 2008, 77 (12)

[6] Thermodynamics of impurities in semiconductors [J].

Estreicher, SK ;

Sanati, M ;

West, D ;

Ruymgaart, F .

PHYSICAL REVIEW B, 2004, 70 (12) :125209-1

[7] HYDROGEN-RELATED DEFECTS IN CRYSTALLINE SEMICONDUCTORS - A THEORISTS PERSPECTIVE [J].

ESTREICHER, SK .

MATERIALS SCIENCE & ENGINEERING R-REPORTS, 1995, 14 (7-8) :319-412

[8] Optimized basis sets for the collinear and non-collinear phases of iron [J].

García-Suárez, VM ;

Newman, CM ;

Lambert, CJ ;

Pruneda, JM ;

Ferrer, J .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (30) :5453-5459

[9]

Goss JP, 2007, TOP APPL PHYS, V104, P69

[10] On the kinetics of the formation of interstitial Fe-vacancy pairs in silicon at high temperatures [J].

Gunnlaugsson, HP ;

Weyer, G ;

Christensen, NE ;

Dietrich, M ;

Fanciulli, M ;

Bharuth-Ram, K ;

Sielemann, R ;

Svane, A .

PHYSICA B-CONDENSED MATTER, 2003, 340 :532-536

← 1 2 3 4 5 6 →