Fabrication of a Homojunction Light Emitting Diode with ZnO-Nanorods/ZnO:As-Film Structure

被引：8

作者：

Sun, Jingchang ^{[1
,2
]}

Bian, Jiming ^{[3
]}

Wang, Yan ^{[1
]}

Wang, Yuxin ^{[1
]}

Gong, Yu ^{[1
]}

Li, Yang ^{[1
]}

Liu, Kuichao ^{[1
]}

Zhang, Sailu ^{[1
]}

Liu, Yuanda ^{[3
]}

Liang, Hongwei ^{[3
]}

Du, Guotong ^{[2
,3
]}

Yu, Naisen ^{[4
]}

机构：

[1] Liaoning Normal Univ, Sch Phys & Elect Technol, Dalian 116029, Peoples R China

[2] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130023, Peoples R China

[3] Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China

[4] Dalian Nationalities Univ, Sch Phys & Mat Engn, Inst Optoelect Technol, Dalian 116600, Peoples R China

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2012年 / 15卷 / 05期

基金：

中国博士后科学基金;

关键词：

CHEMICAL-VAPOR-DEPOSITION; ZINC-OXIDE;

D O I：

10.1149/2.020205esl

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A novel ZnO homojunction light emitting diode (LED) with n-ZnO-nanorods/p-ZnO:As-film structure is fabricated on the GaAs substrate. Desirable rectifying behavior and distinct ultraviolet electroluminescence emission are observed from this novel structured ZnO homojunction LED. The well-aligned n-type one-dimensional ZnO nanorods are synthesized by a simple wet chemical bath deposition. To fabricate the ZnO nanorods on the GaAs substrate, a key two-dimensional intermediate ZnO:As film layer is employed. The ZnO:As film is grown by metal organic chemical vapor deposition followed by an annealing treatment. Moreover, the intermediate ZnO:As film is also used as the p-type layer of the ZnO LED. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.020205esl] All rights reserved.

引用

页码：H164 / H166

页数：3

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