Fabrication of BaSi2 films on transparent CaF2(111) substrates by molecular beam epitaxy for optical characterization

被引：2

作者：

Toh, K. ^{[1
]}

Saito, T. ^{[1
]}

Khan, M. Ajmal ^{[1
]}

Okada, A. ^{[1
]}

Usami, N. ^{[2
]}

Suemasu, T. ^{[1
]}

机构：

[1] Univ Tsukuba, Inst Appl Phys, 1-1-1 Tennohdai, Tsukuba, Ibaraki 3058573, Japan

[2] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

ASIA-PACIFIC CONFERENCE ON SEMICONDUCTING SILICIDES SCIENCE AND TECHNOLOGY TOWARDS SUSTAINABLE OPTOELECTRONICS (APAC-SILICIDE 2010) | 2011年 / 11卷

基金：

日本科学技术振兴机构;

关键词：

BaSi2; molecular beam epitaxy; CaF2; optical absorption; THIN-FILMS; GROWTH; SI(111);

D O I：

10.1016/j.phpro.2011.01.050

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We have grown BaSi2 films on transparent CaF2(111) substrates by molecular beam epitaxy using Si template layers. The crystalline quality of the Si layers on the CaF2(111) was improved by electron stimulated desorption (ESD) technique prior to the deposition of Si. We successfully formed highly-oriented Si films on the ESD-treated CaF2(111) surface at 650 degrees C. The RHEED pattern suggested that the two kinds of < 111 >-oriented Si epitaxial variants known as type A and type B were formed on the CaF2(111) substrates. The BaSi2 films were grown on the Si layers formed on CaF2(111) substrates, but they were not a-axis oriented, probably due to the rough surface of the Si layers. (C) 2010 Published by Elsevier B.V.

引用

页码：189 / 192

页数：4

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