Fabrication and characterization of (Ba, Sr)RuO3 ceramic targets and thin films for ferroelectric BaTiO3 thin-film capacitors

被引:1
作者
Noguchi, Yuji [1 ]
Tada, Masaru [2 ]
Kitanaka, Yuuki [1 ]
Miyayama, Masaru [1 ]
机构
[1] Univ Tokyo, Sch Engn, Dept Appl Chem, Bunkyo Ku, 7-3-1 Hongo,Bunky, Tokyo 1138656, Japan
[2] Tokyo Inst Technol, Tech Dept, Meguro Ku, 2-12-1 Ookayama, Tokyo 1528552, Japan
来源
AIP ADVANCES | 2018年 / 8卷 / 11期
关键词
MICROWAVE DIELECTRIC-PROPERTIES; PULSED-LASER DEPOSITION; MAGNETIC-PROPERTIES; SRRUO3; OXYGEN; TRANSITION; CRYSTAL; MICROSTRUCTURE; CONDUCTIVITY; SUBSTITUTION;
D O I
10.1063/1.5063861
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We report the preparation of (Ba, Sr)RuO3 ceramic targets in a conventional process in air at ambient pressure and their epitaxial thin-film growth on Ba0.7Sr0.3TiO3 buffered SrTiO3 substrates. We found that a simultaneous addition of CuO and SiO2 is effective in obtaining the relatively dense ceramics. The microstructural and chemical investigations show that the synergetic effect of a liquid-phase (Ba-Sr-O) assisted grain growth accelerated by Cu-derived Ru charge inhomogeneity along with a rearrangement of grains promoted by a liquid-phase silicate is the mechanism of the (Ba, Sr)RuO3 densification. We demonstrate that all epitaxial BaTiO3 thin-film capacitors with (Ba1-x Sr-x) RuO3 electrodes can be obtained up to x of 0.6. (C) 2018 Author(s).
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页数:18
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