Above 600 mS/mm Transconductance with 2.3A/mm Drain Current Density AlN/GaN High-Electron-Mobility Transistors Grown on Silicon

被引：27

作者：

Medjdoub, Farid ^{[1
]}

Zegaoui, Malek ^{[1
]}

Waldhoff, Nicolas ^{[1
]}

Grimbert, Bertrand ^{[1
]}

Rolland, Nathalie ^{[1
]}

Rolland, Paul-Alain ^{[1
]}

机构：

[1] Inst Elect Microelect & Nanotechnol, F-59650 Villeneuve Dascq, France

来源：

APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 06期

关键词：

ALGAN/GAN; HEMTS;

D O I：

10.1143/APEX.4.064106

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlN/GaN high-electron-mobility transistors (HEMTs) capped with an in-situ grown SiN have been successfully developed on 100 mm Si substrates. A unique combination of maximum output current density exceeding 2A/mm and a record extrinsic transconductance above 600 mS/mm has been reached, which is well beyond the highest reported values of any GaN-on-Si HEMTs. The current gain extrinsic cutoff frequency f(T) and the maximum oscillation frequency f(max) were 85 and 103 GHz with 0.16-mu m gate length, respectively, resulting in a high f(T) - L-g product that promises low-cost, high performance millimeter wave electronics. (C) 2011 The Japan Society of Applied Physics

引用

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