SiC sensors: a review

被引：216
作者：
Wright, N. G. [1 ]
Horsfall, A. B. [1 ]
机构：
[1] Newcastle Univ, Sch Elect Elect & Comp Engn, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2007年 / 40卷 / 20期
基金：
英国工程与自然科学研究理事会;
关键词：
D O I：
10.1088/0022-3727/40/20/S17
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Silicon carbide has attracted considerable attention in recent years as a potential material for sensor devices. This paper reviews the current status of SiC technology for a wide range of sensor applications. It is shown that SiC MEMs devices are well- established with operational devices demonstrated at high temperatures ( up to 500 degrees C) for the sensing of motion, acceleration and gas flow. SiC sensors devices using electrical properties as the sensing mechanism have also been demonstrated principally for gas composition and radiation detection and have wide potential use in scientific, medical and combustion monitoring applications.
引用
收藏
页码：6345 / 6354
页数：10
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