Dislocations in GaAs: Their impact on electronic and atomic processes

Significance of dislocations in multiple processes occurring in GaAs single crystals and heterostructures is illustrated by a few examples based on the results obtained by the writers. It is described first the identification of dislocation-core electron states and their behaviour as electron (hole) traps. It is demonstrated next that dislocations, owing to their topological properties, can give rise to quantum interference of charge carriers. Further, an assistance of dislocations in the transformation of lattice defects, and in particular, in the production of arsenic antisites is discussed. Finally, a nontrivial "conservative climb" mechanism of the dislocation loop expansion in strained layer-structures is predicted.