An Ultra-Low-Power 24 GHz Low-Noise Amplifier Using 0.13 μm CMOS Technology

被引：13

作者：

Cho, Wei-Han ^{[1
,2
]}

Hsu, Shawn S. H. ^{[1
,2
]}

机构：

[1] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[2] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 300, Taiwan

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2010年 / 20卷 / 12期

关键词：

CMOS; k-band; low-noise amplifier (LNA); low power;

D O I：

10.1109/LMWC.2010.2085038

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This study presents an ultra-low-power 24 GHz low-noise amplifier (LNA) using 0.13 mu m CMOS technology. We propose of using the minimum noise measure (M(MIN)) as the guideline to determine the optimal bias and geometry of the transistors in the circuit. The power-constrained simultaneous noise and input matching (PCSNIM) technique is also employed for this design. With the proposed design approach, the LNA achieves a peak gain of 9.2 dB and a minimum NF of 3.7 dB under a supply voltage of 1 V. The associated power consumption is only 2.78 mW.

引用

页码：681 / 683

页数：3

共 11 条

[1] 30 GHz CMOS low noise amplifier [J].

Adabi, Ehsan ;

Heydari, Babak ;

Bohsali, Mounir ;

Niknejad, Ali M. .

2007 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2007, :625-+

[2] An ultrawideband CMOS low-noise amplifier for 3.1-10.6-GHz wireless receivers [J].

Bevilacqua, A ;

Niknejad, AM .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2004, 39 (12) :2259-2268

[3]

GONZALEZ G, 1997, MICROWAVE TRANSISTOR

[4] A 0.18-μm CMOS balanced amplifier for 24-GHz applications [J].

Jin, Jun-De ;

Hsu, Shawn S. H. .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2008, 43 (02) :440-445

[5] A 3.1-10.6 GHz ultra-wideband CMOS low noise amplifier with current-reused technique [J].

Lin, Yi-Jing ;

Jin, Jun-De ;

Chan, C. Y. .

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2007, 17 (03) :232-234

[6] CMOS low-noise amplifier design optimization techniques [J].

Nguyen, TK ;

Kim, CH ;

Ihm, GJ ;

Yang, MS ;

Lee, SG .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2004, 52 (05) :1433-1442

[7]

Sanduleanu MAT, 2006, IEEE RAD FREQ INTEGR, P143

[8]

Sayag A., 2008, P IEEE RFIC S, P373

[9] A 1.5-V, 1.5-GHz CMOS low noise amplifier [J].

Shaeffer, DK ;

Lee, TH .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1997, 32 (05) :745-759

[10] A 24-GHz 3.9-dB NF low-noise amplifier using 0.18 μm CMOS technology [J].

Shin, SC ;

Tsai, MD ;

Liu, RC ;

Lin, KY ;

Wang, H .

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2005, 15 (07) :448-450

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