Laser Irradiation and Temperature Annealing of CuO-Cu2O Complex Thin Films

被引：3
作者：
Saied, E. A. [1 ]
Ismahil, M. M. [1 ]
Hassan, Y. M. [1 ]
机构：
[1] Salahaddin Univ, Dept Phys, Coll Sci, Erbil, Kurdistan, Iraq
来源：
ARABIAN JOURNAL FOR SCIENCE AND ENGINEERING | 2020年 / 45卷 / 06期
关键词：
CuO; Cu2O; Thin films; Laser irradiation; Annealing;
D O I：
10.1007/s13369-020-04367-z
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
CuO-Cu2O complex thin films were synthesised on glass and p-type Si substrates through the dip-coating method. A precursor solution was prepared by dissolving CuCl2 center dot 6H(2)O powder in methanol. The films were deposited through the dip-coating method and dried at 430 K. One group of samples was irradiated with a green laser (lambda = 540 nm, 10 W), and another group of samples was annealed at 530 K or 630 K. Fourier-transform infrared spectroscopy confirmed the presence of the functional groups of CuO and Cu2O. X-ray diffraction and ultraviolet-visible spectroscopy were used to investigate the structural and optical properties of the films. The effects of laser irradiation and annealing temperature on the films were discussed. Results indicated that the deposited CuO-Cu2O complex films were resistive, and Au enabled Ohmic contact.
引用
收藏
页码：4921 / 4927
页数：7
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